PART |
Description |
Maker |
EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位,2个等级) 512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBD |
DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based 200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, 0.45 ns, PBGA84 128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
HY5PS12821F-3.75 HY5PS12821F-4 HY5PS12821LF-3.75 H |
DDR2 SDRAM - 512Mb 512Mb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
HY5PS12821F |
(HY5PS12xx21F) 512Mb DDR2 SDRAM
|
Hynix Semiconductor
|
EBE51AD8AJFA EBE51AD8AJFA-6E-E |
512MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
EBE51RC4AAFA-4C-E EBE51RC4AAFA-5C-E |
512MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
K4T51163QE K4T51083QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
K4T51043QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|